MRF6V3090NBR1

transistors RF mosfet vhv6 860mhz 90w TO 272wb4

器件标准： Rohs认证无铅标识

器件参数

参数名称

属性值

Manufacture

Freescale Semiconduc

产品种类
Product Category

Transistors RF MOSFET

RoHS

Yes

Configurati

Single

Transistor Polarity

N-Channel

频率
Frequency

0.47 GHz to 0.86 GHz

Gai

22 dB

Output Powe

18 W

Vds - Drain-Source Breakdown Voltage

115 V

Vgs - Gate-Source Breakdown Voltage

10 V

最大工作温度
Maximum Operating Temperature

+ 150 C

安装风格
Mounting Style

SMD/SMT

封装 / 箱体
Package / Case

TO-270-4 WB

系列
Packaging

Reel

工厂包装数量
Factory Pack Quantity

500

Vgs th - Gate-Source Threshold Voltage

2.4 V

Unit Weigh

2 g

参数对比

与MRF6V3090NBR1相近的元器件有：MRF6V3090NBR5、MRF6V3090NR5、MRF6V3090NR1。描述及对比如下：

型号	MRF6V3090NBR1	MRF6V3090NBR5	MRF6V3090NR5	MRF6V3090NR1
描述	transistors RF mosfet vhv6 860mhz 90w TO 272wb4	transistors RF mosfet vhv6 860mhz 90w TO 272wb4	transistors RF mosfet vhv6 860mhz 90w TO 270wb4	transistors RF mosfet vhv6 860mhz 90w TO 270wb4
Manufacture	Freescale Semiconduc	Freescale Semiconduc	Freescale Semiconduc	Freescale Semiconduc
产品种类 Product Category	Transistors RF MOSFET	Transistors RF MOSFET	Transistors RF MOSFET	Transistors RF MOSFET
RoHS	Yes	Yes	Yes	Yes
Configurati	Single	Single	Single	Single
Transistor Polarity	N-Channel	N-Channel	N-Channel	N-Channel
频率 Frequency	0.47 GHz to 0.86 GHz	0.47 GHz to 0.86 GHz	0.47 GHz to 0.86 GHz	0.47 GHz to 0.86 GHz
Gai	22 dB	22 dB	22 dB	22 dB
Output Powe	18 W	18 W	18 W	18 W
Vds - Drain-Source Breakdown Voltage	115 V	115 V	115 V	115 V
Vgs - Gate-Source Breakdown Voltage	10 V	10 V	10 V	10 V
最大工作温度 Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C	+ 150 C
安装风格 Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT
封装 / 箱体 Package / Case	TO-270-4 WB	TO-270-4 WB	TO-272-4 WB EP	TO-272-4 WB EP
系列 Packaging	Reel	Reel	Reel	Reel
工厂包装数量 Factory Pack Quantity	500	50	50	500
Vgs th - Gate-Source Threshold Voltage	2.4 V	2.4 V	2.4 V	2.4 V
Unit Weigh	2 g	2 g	1.646 g	1.646 g